Author:
Ulber Isabell,Barth Axel,Fuhs Walther,Mell Helmut
Abstract
ABSTRACTThe defect-related photoluminescence (0.8–0.9eV) of a-Si:H is studied as a function of the defect density ND and the temperature using subgap excitation of Ex= 1.16eV. Electron bombardment, light exposure and phosphorus doping were employed to create defects. The defect density ND was infered from CPM- and PDS-spectroscopy. We conclude from the measured density-of-states distributions of doped films that the radiative process is tunneling of bandtail carriers (Majority carriers) into the defect states. The dependence of the emission intensity on ND suggests that only a subgroup of the defects acts as radiative center. We propose that the local structure of the defect determines whether it acts as radiative or nonradiative center.
Publisher
Springer Science and Business Media LLC
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献