Improvement of film Quality of A-Si:H Deposited by Photo-CVD using SiH2Cl2

Abstract

ABSTRACTHydrogenated Amorphous silicon films (a-Si:H) were prepared by mercury sensitized photo-CVD using SiH4 and SiH2Cl2 gas mixture. The effects of chlorine (Cl) on the electrical, optical and structural properties of the a-Si:H films were investigated. It was found that a small addition of SiH2Cl2 to the deposition system increases the photo-sensitivity, decreases the defect density, and reduces the light induced degradation of a-Si:H films. At a large addition of SiH2Cl2, however, the CI incorporation into the films was observed, resulting in the deterioration of the film properties. The electrical and optical properties were successfully improved by the H2 dilution when the films were deposited with a large addition of SiH2Cl2.