Electronic properties of amorphous and microcrystalline silicon prepared in a microwave plasma from SiF4
Author:
Affiliation:
1. a Carnegie Laboratory of Physics , University of Dundee , Dundee DD1 4HN, Scotland
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642819108217878
Reference24 articles.
1. Recombination processes ina-Si:H: Spin-dependent photoconductivity
2. Determination of the recombination rate constants in amorphous silicon from double-injection experiments
3. The extended-state hole mobility in amorphous silicon
4. Determination of the extended-state electron mobility in a-Si
5. Low pressure microwave glow discharge process for high deposition rate amorphous silicon alloy
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