On-chip tensile testing of nanoscale silicon free-standing beams-Reference-Cited by-同舟云学术

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On-chip tensile testing of nanoscale silicon free-standing beams

Published:2011-11-04 Issue:3 Volume:27 Page:571-579
ISSN:0884-2914
Container-title:Journal of Materials Research
language:en
Short-container-title:J. Mater. Res.

Author:

Bhaskar Umesh,Passi Vikram,Houri Samer,Escobedo-Cousin Enrique,Olsen Sarah H.,Pardoen Thomas,Raskin Jean-Pierre

Abstract

Abstract

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference45 articles.

1. Strained ultrahigh performance fully depleted nMOSFETs with f/sub t/ of 330 GHz and sub-30-nm gate lengths

2. Size and temperature effects on the fracture mechanisms of silicon nanowires: Molecular dynamics simulations

3. Anomalous Piezoresistance Effect in Ultrastrained Silicon Nanowires

4. Influence of Surface Chemical Modification on Charge Transport Properties in Ultrathin Silicon Membranes

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1. Definitive engineering strength and fracture toughness of graphene through on-chip nanomechanics;Nature Communications;2024-07-12

2. Band gap reduction in highly-strained silicon beams predicted by first-principles theory and validated using photoluminescence spectroscopy;Optical Materials;2023-10

3. Raman strain–shift measurements and prediction from first-principles in highly strained silicon;Journal of Materials Science: Materials in Electronics;2023-02

4. Mechanically robust pyrolyzed carbon produced by two photon polymerization;Carbon;2023-01

5. Band Gap Reduction in Highly-Strained Silicon Beams Predicted by First-Principles Theory and Validated Using Photoluminescence Spectroscopy;2023

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