Rapid Thermal Annealing in III-V Compounds-Reference-Cited by-同舟云学术

Rapid Thermal Annealing in III-V Compounds

Published:1985 Issue: Volume:45 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Davies D. Eirug

Abstract

ABSTRACTProgress in applying rapid thermal annealing for activating implants is surveyed. Advantages to be gained through curtailing substrate semiinsulating loss, enhancing heavy n-type activation, and in reducing the diffusive redistribution of p-type implants are discussed in detail. Consideration is given to encapsulation requirements and the role of stoichiometry in activation. While the emphasis is on GaAs, work on InP and InGaAs has also been included.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference50 articles.

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5. Application of thermal pulse annealing to ion-implanted GaAlAs/GaAs heterojunction bipolar transistors

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Room‐temperature annealing of Si implantation damage in InP;Applied Physics Letters;1991-11-11

2. Reproducible group‐V partial pressure rapid thermal annealing of InP and GaAs;Journal of Applied Physics;1990-09

3. Rapid thermal annealing of GaAs in a graphite susceptor—comparison with proximity annealing;Journal of Applied Physics;1989-07-15

4. Rapid Thermal Annealing of Ion Implanted Semiconductors;Nuclear Physics Applications on Materials Science;1988

5. Improved activation of Mg+and As+dual implants in GaAs by capless rapid thermal annealing;Applied Physics Letters;1987-02-23