High Density Direct Bond Interconnect (DBI) Technology for Three Dimensional Integrated Circuit Applications

Abstract

ABSTRACTA novel direct wafer bonding technology capable of forming a very high density of electrical interconnections across the bond interface integral to the bond process is described. Results presented include an 8 um interconnection pitch, die-to-wafer and wafer-to-wafer bonding formats, temperature cycling reliability × 10 greater than the JEDEC requirement, connection yield ∼ 99.999, > 50% part yield on parts with ∼ 450,000 connections, and < 0.1 Ohm connection resistance at 1pA without requiring a voltage surge to induce current.