Author:
Carpenter R. W.,Vanderschaeve G.,Varkera C. J.,Wilson S. R.
Abstract
ABSTRACTCzochralski silicon was implanted with oxygen at 0.4 and 3.5MeV to obtain concentrations near 1020 oxygen/cm3 in the implanted region. Following implantation the wafers were aged at about 1000°C for 7 hours, and the resulting precipitates were examined by HREM. A high density of octahedral SiOx precipitates (∼1015/cm3) was the dominant morphology. Plate type precipitates and dislocations were also present at lower density. The data indicate octahedra grow from the plates.
Publisher
Springer Science and Business Media LLC
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