Octahedral precipitates in high temperature annealed Czochralski-grown silicon
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Electrical and Optical Properties of Heat-Treated Silicon
2. Precipitation and redistribution of oxygen in Czochralski‐grown silicon
3. Characterization of structural defects in annealed silicon containing oxygen
4. Electron microscopic observations of SiO2 precipitates at dislocations in silicon
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1. Dose-window dependence on Si crystal orientation in separation by implanted oxygen substrate formation;Journal of Materials Research;2004-12-01
2. Microstructure of high temperature–pressure treated nitrogen-doped Czochralski silicon;Journal of Alloys and Compounds;2004-11
3. Transmission electron microscopy investigation of oxygen precipitation in Czochralski silicon annealed under high pressure;Materials Science and Engineering: B;2003-09
4. Investigation of Precipitation in Czochralski Silicon by Phonon Spectroscopy;physica status solidi (a);1998-07
5. Oxygen precipitation and denuded zone characterization with the electrolytical metal tracer technique;Journal of Applied Physics;1997-07-15
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