Author:
Hahn S.,Shatas S. C.,Stein H. J.
Abstract
ABSTRACTRapid thermal annealing and furnace annealing steps have been combined to investigate the effects of thermal donor generation and annihilation upon oxygen precipitation in low and high carbon content silicon wafers. Thermal donors were formed by furnace annealing at 450°C. Rapid thermal annealing was performed in 10 s periods at temperatures between 600° and 1000°C and was followed by two step furnace annealing at 700° and 950 °C. Rapid thermal annealing separates the annealing stage for thermal donor removal from that for removal of oxygen precipitate nuclei, and a marked dependence upon carbon is observed for nuclei stability under RTA. Implications of these observations for models of precipitate nuclei are considered.
Publisher
Springer Science and Business Media LLC
Reference11 articles.
1. Carbon and the Kinetics of Oxygen Precipitation in Silicon
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3. 1. For recent discussions on thermal donors in silicon see “Proc. 13th International Conf. on Defects in Semiconductors” edited by Kimerling L.C. and Parsey J.M. Jr , Metallurgical Society of American Instititute of Mining, Metallurgical and Petroleum Engineers, Warrendale, PA (1985) pp. 129–146 and pp. 639–733.
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