A Defect Control Technique for the Intrinsic Gettering in Silicon Device Processing-Reference-Cited by-同舟云学术

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A Defect Control Technique for the Intrinsic Gettering in Silicon Device Processing

Published:1984-01-20 Issue:Part 2, No. 1 Volume:23 Page:L9-L11
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kishino Seig\=o,Aoshima Takaaki,Yoshinaka Akira,Shimizu Hirofumi,Ono Minoru

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 32 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The effect of the ramping rate on oxygen precipitation and the denuded zone in heavily doped Czochralski silicon;Journal of Physics: Condensed Matter;2004-02-20

2. An Electronics Division Retrospective (1952-2002) and Future Opportunities in the Twenty-First Century;Journal of The Electrochemical Society;2002

3. Pack-extraction method combined with inductively coupled plasma mass spectroscopy to monitor metal contaminants on surfaces of silicon wafers;Semiconductor Science and Technology;2000-06-23

4. Low-Cost p[sup −]/p[sup −] Epitaxial Silicon Wafers for Densely Packed Metal-Oxide-Semiconductor Devices;Journal of The Electrochemical Society;2000

5. Gettering in Silicon;Wiley Encyclopedia of Electrical and Electronics Engineering;1999-12-27

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