Author:
Johnson N. M.,Walker J.,Doland C. M.,Winer K.,Street R. A.
Abstract
ABSTRACTResults are presented on the properties of a-Si:H thin films deposited with a remote hydrogen plasma. An essential feature of the reactor design is the use of an alumina (rather than quartz) tube to contain the hydrogen plasma for low oxygen contamination of the films. High doping efficiency is demonstrated for both P-and B-doped amorphous films, and the effects of high silane dilution and deposition temperature are illustrated with P-doped amorphous and microcrystalline silicon films.
Publisher
Springer Science and Business Media LLC
Reference11 articles.
1. Electronic transport in doped amorphous silicon
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3. Hydrogen incorporation in undoped microcrystalline silicon
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