Role of Surface Reconstruction and External Ion Beam in the Growth Kinetics of III-V Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

Role of Surface Reconstruction and External Ion Beam in the Growth Kinetics of III-V Molecular Beam Epitaxy

Published:1987 Issue: Volume:94 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Ogale S. B.,Thomsen M.,Madhukar A.

Abstract

ABSTRACTComputer simulations of III-V molecular beam epitaxy (MBE) show that surface reconstruction induced modulation of kinetic rates could give rise to ordering in alloys. Results are also presented for the possible influence of an external ion beam in achieving low temperature epitaxy as well as smoother growth front under usual conditions.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference12 articles.

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4. Dynamics of film growth of GaAs by MBE from Rheed observations

5. Long-Range Order inAlxGa1−xAs

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2. Adatom processes near step‐edges and evolution of long range order in semiconductor alloys grown from vapor phase;Applied Physics Letters;1992-04-27

3. Surface‐relaxation‐controlled mechanism for occurrence of long range ordering in III‐V semiconductor alloys grown by molecular beam epitaxy;Applied Physics Letters;1991-09-09

4. Monte Carlo simulation of MBE growth of the 2 × 4 reconstructed GaAs(001) surface;Journal of Crystal Growth;1991-05

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