Surface‐relaxation‐controlled mechanism for occurrence of long range ordering in III‐V semiconductor alloys grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105307
Reference20 articles.
1. Long-Range Order inAlxGa1−xAs
2. Stability of Ordered Bulk and Epitaxial Semiconductor Alloys
3. Chemical and elastic effects on isostructural phase diagrams: Theɛ-Gapproach
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5. Observation of Strong Ordering inGaxIn1−xPalloy semiconductors
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1. Direct enumeration studies of band-gap properties of AlxGayIn1−x−yP alloys;Journal of Applied Physics;2009-06-15
2. Determination of 2D Pair Correlations and Pair Interaction Energies of In Atoms in Molecular Beam Epitaxially Grown InGaAs Alloys;Physical Review Letters;1997-12-15
3. Diffuse scattering in partially ordered III-V semiconductor alloys;Physical Review B;1995-08-15
4. Annealing-induced near-surface ordering in disordered Ga0.5In0.5P;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1995-07
5. Kinetics of CuPt-type ordered phase formation in III-V semiconductor alloys during (001) epitaxial growth due to step flow;Physical Review B;1995-04-15
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