Hydrogen Measurement of Thin Film Silicon: Hydrogen Alloy Films Technique Comparison-Reference-Cited by-同舟云学术

Hydrogen Measurement of Thin Film Silicon: Hydrogen Alloy Films Technique Comparison

Published:1985 Issue: Volume:48 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Pollock Gary A.

Abstract

ABSTRACTThe hydrogen content in thin film silicon:hydrogen alloy material has been measured by five techniques: 15N nuclear resonance reaction analysis, secondary ion mass spectrometry, infrared spectroscopy, nuclear elastic scattering spectroscopy, and Rutherford backscattering spectroscopy. NRA and SIMS data agree most closely in this study, although SIMS data from three of four laboratories are considerably scattered. The hydrogen content of TFS ranges from 18% at a deposition temperature of 150°C to 10% at 250°C. It varies little, if any, with thickness. Some advantages and disadvantages of the five techniques are discussed.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference12 articles.

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