Properties of inxGa1-xAs Crystals Grown by Lpee on Patterned GaAs Substrates

Abstract

ABSTRACTInxGa1-xAs crystals, 0 < x < 0.2, have been successfully grown by LPEE on the GaAs substrates which, prior to growth, were coated with SiO2 layer and patterned by photolithography. The ternary seeds originated in the oxide free seeding windows, 2 – 20 μm wide and 100 μm apart, extended over SiO2 coating and merged to result in a continuous, monocrystalline layer with no apparent trace of boundaries of the merging islands. A considerable improvement in structural perfection of the ternary crystals has been achieved: the FWHMs of the rocking curves and dislocation density was in the 30 –40 arc seconds and low 105cm−2 range, respectively. Structural perfection of InxGa1-xAs crystals grown on patterned GaAs substrates is far superior to that of the ternary buffer layers grown by MBE or MOCVD.