Quantitative Photoreflectance Experiments on Indium Phosphide Surfaces and Structures

Abstract

AbstractPhotoreflectance (PR) modulation spectroscopy is a widely used optical technique on GaAs but it has been applied much more rarely on InP being an equally important optoelectronic compound semiconductor. Typical PR spectral lineshapes in the fundamental gap region of various InP materials are investigated. Spectral components such as Franz-Keldysh oscillations, lowfield features, and epilayer interference phenomena are analyzed. Current applications concern the determination of the surface electric field, investigations of ion etching and hydrogenation processing, and the characterization of homo- and strained heteroepitaxial layers by means of synchronous phase and complex fitting analysis.