Modulation of Growing Surface with Atomic Hydrogen and Excited Argon to Fabricate Narrow Gap a-Si:H

Author:

Futako W.,Shimizu I.,Fortmann C. M.

Abstract

AbstractHydrogenated amorphous silicon (a-Si:H) with a gaps narrower than 1.7 eV were made by repeating the deposition of a thin layer (1–3 nm thick) and the treatment of growing surface with a mixture of H and Ar*. Crystallization induced by permeation of hydrogen into the subsurface at high substrate temperature (>200C) was efficiently prevented by treating with a mixture of H and Ar*. The activation of growing surface may arise from releasing a part of hydrogen on surface by treating with Ar*. High quality a-Si:H films containing hydrogen of 3 atom % with a gap of 1.6 eV were made by chemical annealing with a mixture of H and Ar*.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference5 articles.

1. 5: Yoshino K. , Futako W. , Wasai Y. and Shimizu I. , MRS Spring Meeting (San Fransicso, 1996) submitted

2. A novel preparation technique for preparing hydrogenated amorphous silicon with a more rigid and stable Si network

3. 4: Futako W. , Yoshino K. , Nakamura K. , Fortmann C.M. and Shimizu I. J.Non-Cryst.Solids (in press)

4. Roles of Atomic Hydrogen in Chemical Annealing

5. A Novel Preparation Technique Termed “Chemical Annealing” to make a Rigid and Stable Si-Network

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1. Recent Advances and Future Opportunities for Thin-Film Solar Cells;Springer Series in Photonics;2004

2. Multijunction Solar Cells and Modules;Technology and Applications of Amorphous Silicon;2000

3. Band gap tuning of a-Si:H from 1.55 eV to 2.10 eV by intentionally promoting structural relaxation;Journal of Non-Crystalline Solids;1998-05

4. Materials aspects of amorphous silicon solar cells;Current Opinion in Solid State and Materials Science;1997-08

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