1/f Noise and Thermal Equilibration Effects in Hot Wire Deposited Amorphous Silicon

Abstract

AbstractMeasurements of the conductance fluctuations and thermal equilibration of the dark conductivity of a series of undoped hydrogenated amorphous silicon thin films synthesized by Hot-Wire Chemical Vapor Deposition (HWCVD), with hydrogen contents varying from less than one to twelve atomic percent are reported. The spectral density of the conductance fluctuations varies inversely with frequency f and is dependent upon hydrogen concentration; the 1/f noise statistics are non- Gaussian, indicating correlated fluctuators as is observed in PECVD a-Si:H. These results indicate that aspects of electronic transport and defect dynamics in HWCVD films are similar to those in PECVD a-Si:H films.