Photoconductive Polycrystalline Silicon Films on Glass Obtained by Hot-Wire CVD

Abstract

AbstractTextured polycrystalline silicon films with columnar structure have been deposited on glass at low temperature (400–550°C) and high deposition rate (10 to 15 Å/s) by hot-wire chemical vapour deposition using SiH4-H2 gases. The homogeneity of the deposited layer is ± 5% on a 8 cm diameter. As deposited films have a poor photoconductivity. However hydrogen confinement in the films during the deposition or after the deposition is found to be the key for obtaining g.tc/poly-Si with a significant diffusion length. Eventually reasonable values of the mobility lifetime product (> 10−7 cm2/V) are obtained by in situ hydrogen passivation of poly-Si films after deposition. Efficient shifting of the Fermi level is achieved by in situ B or P doping. The incorporation of boron in poly-Si network strongly influences the morphology and the crystalline structure. Undoped films have a Hall mobility of 14 ± 5 cm2/V.s which decreases versus the carrier concentration.