Luminescence Properties of Yb- and Nd- Implanted CdS

Author:

Alshawa A. K.,Lozykowski H. J.,Li T.,Brown I.

Abstract

ABSTRACTThe photoluminescence (PL) and time resolved spectra of Nd- and Yb-implanted CdS samples are studied under pulsed and CW excitations using Ar+ ion laser for different excitation intensities and temperature (9 - 300 K). The samples were annealed under different conditions using the thermal-pulse method. For CdS:Nd, the PL spectra was recorded in the range 890-930 nm (transitions 4F3/24I9/2) and for CdS:Yb it was recorded in the range 985 - 1010 nm (transitions 2F5/22F7/2). The Rise time and decay time were studied for both CdS:Nd and CdS:Yb at different emission lines as a function of temperature and excitation power.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. 1.54 μm Photoluminescence and Electroluminescence in Erbium Implanted 6H SiC;MRS Proceedings;1996

2. Vacuum arc ion sources;Review of Scientific Instruments;1994-10

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