1.54 μm Photoluminescence and Electroluminescence in Erbium Implanted 6H SiC

Abstract

AbstractPhotoluminescence in the neighborhood of 1.54μm due to the 4I13/2 → 4l15/2 transitions is observed from 2 K up to 520 K in erbium implanted 6H SiC. The integrated 1.54 μm photoluminescence (PL) intensity is almost constant from 2 K up to about 400 K, with slight sample to sample variation. The shallow nitrogen donors play an important role in the excitation of the Er3+ centers. 1.54 μm electroluminescence (EL) is observed in erbium implanted 6H SiC p-n junctions under forward bias conditions. The EL spectrum is identical to the PL spectrum.