Movpe of Rare Earth Doped III-V Semiconductors-Reference-Cited by-同舟云学术

Movpe of Rare Earth Doped III-V Semiconductors

Published:1993 Issue: Volume:301 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Scholz F.,Weber J.,Pressel K.,Dörnen A.

Abstract

ABSTRACTDifferent III-V compound semiconductors have been doped with the rare earth (RE) elements Yb, Er, and Tm using atmospheric pressure metalorganic vapor phase epitaxy. Best results have been obtained using the novel metalorganic compounds tris-isopropyl-cyclopentadienyl-RE as precursors which have an acceptable vapor pressure and can be used as liquids at bubbler temperatures of 60°-90°C. Only Yb has been found to occupy a regular lattice site in InP, whereas the other RE show complex optical spectra because of their incorporation in form of different centers and clusters.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference51 articles.

1. Erbium-doped GaAs light-emitting diode at 1.54 μm

2. MOVPE grown InP:Er layers using Er(MeCp)3 and Er(IpCp)3

3. Liquid phase epitaxy and characterization of rare-earth-ion (Yb, Er) doped InP

4. Photoluminescence decay of 1.54 μm Er3+ emission in Si and III-V semiconductors

5. Novel liquid precursors for the growth of InP and GaInAs epitaxial layers by MOVPE

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