MOVPE grown InP:Er layers using Er(MeCp)3 and Er(IpCp)3-Reference-Cited by-同舟云学术

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MOVPE grown InP:Er layers using Er(MeCp)3 and Er(IpCp)3

Published:1990-09 Issue:4 Volume:104 Page:815-819
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Weber J.,Moser M.,Stapor A.,Scholz F.,Bohnert G.,Hangleiter A.,Hammel A.,Wiedmann D.,Weidlein J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference13 articles.

1. Er‐doped InP and GaAs grown by metalorganic chemical vapor deposition

2. Erbium-doped GaAs light-emitting diode at 1.54 μm

3. Temperature dependence of intra‐4f‐shell photo‐ and electroluminescence spectra for erbium‐doped GaAs

4. Intracenter transitions in triply ionized erbium ions diffused into III‐V compound semiconductors

5. Photoluminescence optimization and characteristics of the rare‐earth element erbium implanted in GaAs, InP, and GaP

Cited by 30 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nanocomposites for thermoelectric power generation: rare-earth metal monoantimonide nanostructures embedded in InGaSb and InSbAs ternary alloys;Nanoepitaxy: Materials and Devices III;2011-09-08

2. Infrared, visible and upconversion emission of CaAl12O19 powders doped with Er3+, Yb3+ and Mg2+ ions;Applied Physics B;2011-07-29

3. Metal amides: versatile dopant precursors for electronic materials;Advanced Materials for Optics and Electronics;2000-05

4. Relaxation of optically excited 4f electrons in Er-doped GaxIn1−xP;Physica B: Condensed Matter;1999-12-01

5. Source Molecules;Organometallic Vapor-Phase Epitaxy;1999

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