New, Germanium - Related Defect in Neutron - Irradiated Gallium Phosphide

Abstract

AbstractGaP crystals were irradiated with thermal neutrons with a fluence 1.4 * 10 19 neutrons / cm2 . The isochronal annealing at temperatures up to 800°C resulted in n - type conductivity of irradiated samples. After 800°C anneal 10% of transmuted Ge atoms become neutral donors. Simultaneously the absorption spectrum shows a broad band centered at 1 eV. The similar feature is observed in photoconductivity. The origin of the absorption band is discussed. The band is most likely due to germanium - related defect.