Investigations of the origin of the deep center related luminescence bands due to neutron-transmutation doping (NTD) in GaAs after annealing and its influence on compensation-Reference-Cited by-同舟云学术

Investigations of the origin of the deep center related luminescence bands due to neutron-transmutation doping (NTD) in GaAs after annealing and its influence on compensation

Published:1988-02 Issue: Volume:40-41 Page:357-358
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Rentzsch Rolf,Friedland Klaus Jürgen

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference5 articles.

1. Electron mobility and free‐carrier absorption in GaAs: Determination of the compensation ratio

2. Localized defects in III-V semiconductors

3. Evidence for Self-Activated Luminescence in GaAs: The Gallium Vacancy-Donor Center

4. The incorporation and characterisation of acceptors in epitaxial GaAs

5. Neutron transmutation doping of high purity GaAs

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1. Electron correlation effects at variable-range hopping in doped GaAs, CdTe, Ge and Si;Philosophical Magazine B;2001-09

2. On the Sign and Temperature Dependence of Magnetoresistance in Variable-Range Hopping in Highly Compensated n-GaAs: The Role of Spin-Effects;physica status solidi (b);1997-10

3. Effect of Neutron Irradiation and Annealing on the Intensity of the Copper Related 1.01 eV Emission Band in n-type GaAs;Crystal Research and Technology;1997

4. The photoluminescent spectrum of neutron irradiated GaAs;IEEE Transactions on Nuclear Science;1990-12

5. The EL2 Defect in GaAs: Some Recent Developments;physica status solidi (b);1989-07-01