Photocapacitance Studies Of Light Induced Changes in the Density of Gap States of N-Type Doped and Undoped Hydrogenated Amorphous Silicon Films
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Engineering
Reference13 articles.
1. Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study
2. Light‐induced dangling bonds in hydrogenated amorphous silicon
3. ESR centers, interface states, and oxide fixed charge in thermally oxidized silicon wafers
4. Disorder effects on deep trapping in amorphous semiconductors
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Theory of low temperature capacitance measurements on amorphous silicon thin film solar cells;Physica Scripta;1996-05-01
2. Lattice Relaxation of Deep Defects in Light-Soaked N-Type Hydrogenated Amorphous Silicon;MRS Proceedings;1991
3. A New Technique for Determining Midgap States and Hole Localization in a-Si:H Devices;MRS Proceedings;1990
4. Capacitance Studies of Metastable States in Light-Soaked, Quench-Cooled, and Bias-Annealed N-Type Hydrogenated Amorphous Silicon;MRS Proceedings;1990
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