Plasma Chemistry Control of Silicon Nitride Deposition
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Engineering
Reference11 articles.
1. Local atomic structure in thin films of silicon nitride and silicon diimide produced by remote plasma-enhanced chemical-vapor deposition
2. Gap states in silicon nitride
3. Effect of si—h and n—h bonds on electrical properties of plasma deposited silicon nitride and oxynitride films
4. Bonds and Defects in Plasma-Deposited Silicon Nitride Using SiH4-NH3-Ar Mixture
5. Electron‐spin‐resonance study of defects in plasma‐enhanced chemical vapor deposited silicon nitride
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2. Low temperature plasma processing of nc-Si/a-SiNx:H QD thin films with high carrier mobility and preferred (220) crystal orientation: a promising material for third generation solar cells;RSC Adv.;2014
3. Electrical transport phenomena prevailing in undoped nc-Si/a-SiNx:H thin films prepared by inductively coupled plasma chemical vapor deposition;Journal of Applied Physics;2013-08-21
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