Low temperature plasma processing of nc-Si/a-SiNx:H QD thin films with high carrier mobility and preferred (220) crystal orientation: a promising material for third generation solar cells-Reference-Cited by-同舟云学术

Low temperature plasma processing of nc-Si/a-SiNx:H QD thin films with high carrier mobility and preferred (220) crystal orientation: a promising material for third generation solar cells

Published:2014 Issue:70 Volume:4 Page:36929-36939
ISSN:2046-2069
Container-title:RSC Adv.
language:en
Short-container-title:RSC Adv.

Author:

Sain Basudeb¹²³⁴,Das Debajyoti¹²³⁴

Affiliation:

1. Nano-Science Group

2. Energy Research Unit

3. Indian Association for the Cultivation of Science

4. Kolkata – 700 032, India

Abstract

The nc-Si-QDs/a-SiN_x:H (∼5.7–1.3 nm) thin-films grown by low-temperature Inductively-coupled plasma, possess high carrier-mobility, electrical-conductivity, photosensitivity and preferred (220) crystal orientation, suitable for third-generation solar cells.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/RA/C4RA04610B

Reference57 articles.

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5. Nanostructured solar cells harvesting multi-type energies

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