GaN Growth on Si Using ZnO Buffer Layer

Author:

Kim K.C.,Kang S.W.,Kryliouk O.,Anderson T.J.,Craciun D.,Craciun V.,Singh R.K.

Abstract

AbstractZnO films were deposited by Pulsed Laser Deposition (PLD) onto silicon substrates to serve as a buffer layer for GaN films grown by MOCVD. A ZnO buffer layer was found to improve the quality of GaN grown on Si. The thermal stability of ZnO as a buffer layer was also examined. It was determined that exposure of ZnO/Si to NH3 at high temperature (> 600°C) results in the decomposition of ZnO and subsequent poor nucleation of GaN. The ZnO layer thickness on GaN quality was found to be important.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Investigation on the bonding quality of GaN and Si wafers bonded with Mo/Au nano-layer in atmospheric air;Materials Science in Semiconductor Processing;2020-08

2. Growth and Characterization of GaN/ZnO Heteroepitaxy and ZnO-Based Hybrid Devices;Zinc Oxide Materials for Electronic and Optoelectronic Device Applications;2011-03-28

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