Author:
Pearton S.J.,Abernathy C.R.
Abstract
AbstractMaximum hole densities of 4×1018 cm-3 were produced in Al0.3Ga0.7As by C+Ga implantation and subsequent annealing at ∼800°C. The activation efficiency decreases with increasing AlAs mole fraction and the use of higher temperatures for the Ga co-implantation, due to a reduced vacancy concentration under these conditions. The C diffusivity is ≤2×10−13 cm2sec−1 at 950°C in implanted Al0.3Ga0.7As, demonstrating that C is a much more thermally stable acceptor than Be, Mg, or Zn.
Publisher
Springer Science and Business Media LLC