Author:
Shieh C.,Colvard C.,Mantz J.,Alavi K.,Engelmann R.
Abstract
ABSTRACTThe effect of Ar sputtering, in combination with different dielectric cappings, on the disordering of AlGaAs/GaAs multiple quantum wells was studied. It was found that the combination of Ar sputter etch and SiO2 capping provided the strongest enhancement in disordering. This effect generates enough change in refractive index to produce an index guided laser.
Publisher
Springer Science and Business Media LLC