Pulsed Laser Deposition of Gallium Nitride on Sapphire-Reference-Cited by-同舟云学术

Pulsed Laser Deposition of Gallium Nitride on Sapphire

Published:1997 Issue: Volume:468 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Talyansky V.,Vispute R. D.,Sharma R. P.,Choopun S.,Downes M. J.,Venkatesan T.,Li Y. X.,Salamanca-Riba L. G.,Wood M. C.,Lareau R. T.,Jones K. A.

Abstract

ABSTRACTWe have fabricated high quality single crystalline GaN films on sapphire (0001) substrates using pulsed laser deposition. Our best GaN films on sapphire (0001) featured the FWHM of the GaN (002) peak rocking curve of 7 arcmin, the RBS minimum yield of only 3%, and the energy gap width of 3.4 eV. The effect of the deposition temperature on the crystalline quality of the films is discussed.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference16 articles.

1. High quality epitaxial aluminum nitride layers on sapphire by pulsed laser deposition

2. Blue‐violet light emitting gallium nitride p‐n junctions grown by electron cyclotron resonance‐assisted molecular beam epitaxy

3. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

4. High quality AIN and GaN epilayers grown on (00⋅1) sapphire, (100), and (111) silicon substrates

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