Low-Temperature PETEOS-to-PETEOS Wafer Bonding Using Titanium as Bonding Intermediate-Reference-Cited by-同舟云学术

Low-Temperature PETEOS-to-PETEOS Wafer Bonding Using Titanium as Bonding Intermediate

Published:2006 Issue: Volume:914 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Yu Jian,Moore Richard L.,Lee Sang Hwui,McMahon J. Jay,Lu Jian-Qiang,Gutmann Ronald J.

Abstract

AbstractBonding of pre-processed silicon wafers at back-end-of-the-line (BEOL) compatible conditions is one of the attractive approaches for three-dimensional (3D) integration. Among various technologies being evaluated, bonding of low temperature oxides (e.g., plasma-enhanced tetraethylorthosilicate (PETEOS)) is of great interest. In this work, we report low-temperature PETEOS-to-PETEOS wafer bonding, using a thin layer of titanium (Ti) as bonding intermediate. The bonding strength is evaluated qualitatively, while the bonding interface is examined by Auger electron spectroscopy (AES) and scanning electron microscopy (SEM). Preliminary results of PETEOS/Ti/PETEOS bonding on patterned wafers with single-level Cu damascene structures are also discussed.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

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