The Strain Status of the Buried Self-assembled InAs quantum dots using MeV technique

Abstract

AbstractThe strain status of the buried InAs self-assembled quantum dot was comprehended by measurement first time. Results show the in-plane strain is compressive and lattice in the growth direction is lager than the lattice of GaAs. The strain of the sample annealed at 650 degree relaxes in the growth direction. The growth and the lateral direction become relaxed in the sample annealed at 750 degree.