Author:
Wu Shangli,Webster Richard T.,Anwar A. F. M.
Abstract
AbstractDC and intrinsic small signal parameters are reported for AlGaN/GaN high electron mobility transistors. The calculations are based upon a self-consistent solution of Schrödinger and Poisson's equation to model the quantum well formed in GaN. Transport parameters are obtained from an ensemble Monte Carlo simulation.
Publisher
Springer Science and Business Media LLC