Author:
Eswara Santhana,Pshenova Alisa,Lentzen Esther,Nogay Gizem,Lehmann Mario,Ingenito Andrea,Jeangros Quentin,Haug Franz-Josef,Valle Nathalie,Philipp Patrick,Hessler-Wyser Aïcha,Wirtz Tom
Abstract
AbstractA method for rapid quantitative imaging of dopant distribution using secondary ion mass spectrometry (SIMS) is described. The method is based on SIMS imaging of the cross-section of a reference sample with a known concentration profile. It is demonstrated for the case of boron quantification in silicon in a SIMS imaging mode. A nonlinear relationship between the secondary ion intensity and the concentration is observed. A detection limit of 3 (±2) × 1017 at./cm3 (~6 ppm) is determined with 39 nm pixel-size for the used experimental conditions. As an application example, a boron concentration profile in a passivating contact deposited on a textured Si surface is analyzed.
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science
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