Micro-Raman Characterization of Unusual Defect Structure in Arsenic-Implanted Silicon

Abstract

AbstractRaman spectroscopy has often been used to study the damage to semiconductors induced by ion implantation. Off-axis, macro-Raman spectra reveal extensive damage to the silicon lattice, consistent with many literature reports. However, when the same samples were analyzed in the backscattering mode by micro-Raman spectroscopy, evidence was found for orientational dependent lattice damage and an unusual defect structure. P/O micro-Raman spectra reveal the spatially-varying appearance of a band between 505 and 510 cm−1 always accompanied by that of the silicon optical mode at 520 cm−1.