Thermal Oxidation of Amorphous Silicon-Boron Alloy

Abstract

AbstractThe thermal oxidation of amorphous silicon-boron alloy (prepared by low pressure chemical vapor deposition) with boron contents ranged from 0–40% at a temperature range of 25- 700 °C has been carried out. Crystalline silicon and polycrystalline boron have also been studied for comparison purposes. The resultant thin oxide overlayers were characterized by X-ray photoelectron spectroscopy. It was found that both the oxidation of Si and of B are enhanced by mixing of the two elements. The oxidation of boron is significantly slower than silicon. During oxidation of silicon-boron alloy, preferential oxidation of silicon occurs at the oxide/bulk interface and the silicon oxide overlayer advances into the bulk faster than the boron oxide.