The Effect of Rapid Thermal Annealing on Heteroepitaxial Structures-Reference-Cited by-同舟云学术

The Effect of Rapid Thermal Annealing on Heteroepitaxial Structures

Published:1991 Issue: Volume:91 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Phillips Julia M.,Batstone J. L.,Pfeiffer L.

Abstract

ABSTRACTWe present evidence on the types of structural changes caused by the rapid thermal annealing of two types of heteroepitaxial layers: CaF2/CoSi2/Si(111) and Si(100) on A12O3 (1102). We find that grains in a film can be merged into a single crystal and that the microtwin density can be dramatically lowered. We also find a number of changes in the structure of the heteroepitaxial interfaces.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference6 articles.

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3. Use of a rapid anneal to improve CaF2:Si (100) epitaxy

4. Rapid thermal processing to improve the epitaxy of (100) silicon on (11̄02) sapphire

5. Significant improvement in crystalline quality of molecular beam epitaxially grown GaAs on Si (100) by rapid thermal annealing

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