Low-Temperature Photoluminescence of Mocvd GaAs Grown Directly on Si

Abstract

ABSTRACTWe present a systematic study of the low-temperature photoluminescence from undoped GaAs layers grown directly on Si substrates by MOCVD. GaAs layers from 100Å to 4 μm in thickness were deposited on Si substrates prepared with a variety of doping levels and orientations. The emission from thicker samples is dominated by pairs of lines in the band-edge region. Photoluminescence excitation measurements show that this multiplicity results from two regions in the material with different levels of strain. The stress-induced splitting of the valence band is also studied using excitation spectroscopy. In thinner samples we observe strong emission in the midgap range due to stoichiometric defects. The nature of the defects near the interface depends strongly on the character of the substrate.