Structural and Ferroelectric Properties of Epitaxial PbZr0.52Ti0.48O3 and BaTiO3 Thin Films Prepared on SrRuO3/SrTiO3(100) Substrates

Author:

Contreras J. Rodríguez,Schubert J.,Poppe U.,Trithaveesak O.,Szot K.,Buchal Ch.,Kohlstedt H.,Waser R.

Abstract

AbstractWe have prepared single crystalline epitaxial PbZr0.52Ti0.48O3 (PZT) and BaTiO3 (BTO) thin films on single crystalline epitaxial SrRuO3 (SRO) thin films grown on SrTiO3 (100) (STO) substrates. PZT and SRO thin films were grown using high-pressure on-axis sputtering and BTO using pulsed laser deposition (PLD). The film thickness ranged between 12 to 165 nm. Their excellent structural properties, surface smoothness and interface sharpness were demonstrated by X-Ray Diffraction measurements (XRD), High Resolution Transmission Electron Microscopy (HRTEM) and Atomic Force Microscopy (AFM). Rutherford Backscattering Spectrometry and Channeling measurements (RBS/C) were used to analyze stoichiometry and crystalline quality. Ferroelectric hysteresis loops were obtained for all films of a thickness down to 12 nm showing a decrease in the remanent polarization Pr and an increase in the coercive field Ec towards thinner film thicknesses. Furthermore we have prepared tunneling junctions with a PZT or BTO barrier thickness of 3-6 nm. Reproducible bi-stable I-V-curves and bias dependence of the conductance were obtained suggesting an influence of the ferroelectric properties of the barrier material on the tunnel current.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Ion beam analysis of high pressure deposition of epitaxial PZT thin films;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2010-06

2. High Pressure Deposition of Epitaxial PZT Thin Films on Sr(Nb)TiO3;MRS Proceedings;2003

3. Ferroelectric Properties of 15–20nm-Thick PZT Ultrathin Films Prepared by MOCVD;MRS Proceedings;2002

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