Excimer Laser Melting of MBE-ZnSe

Abstract

ABSTRACTIt has. generally been concluded that good doping in wide-gap semiconductors is best accomplished by non-equilibrium means. Excimer lasers, because of their high intensity and short pulses, are ideal for this. Our earlier laser annealing work on bulk ZnSe resulted in complications due to increased twinning of the sample. Our present work shows that twinning can be eliminated by the use of originally untwinned MBE material. The MBE samples had the additional advantage, over bulk, of a far smoother surface, which simplified the investigation of melting and evaporation. Use of power levels of 10, 20, and 35 MW/cm2 showed no melting at 10 MW/cm2, melting and no detectable evaporation at 20 MW/cm2, and evaporation at 35 MW/cm2. Combined ion beam cratering and SEM examination showed a depth of the melted layer, at 20 MW/cm2, of - 0.5 μm. Moreover, AES analysis showed minimal decomposition of the 20 MW/cm2 sample.