Laser processing of II–VI compounds for improved doping: application to ZnSe:N-Reference-Cited by-同舟云学术

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Laser processing of II–VI compounds for improved doping: application to ZnSe:N

Published:1997-03 Issue:1-3 Volume:45 Page:213-217
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Neumark G.F.,Padmapani N.C.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference14 articles.

1. Semiconductors and Semimetals;Wood,1984

2. Pulsed beam processing of GaAs;Lowndes,1984

3. Doping and conductivity in widegap II–VI compounds;Neumark,1992

4. Blue-green laser diodes;Hasse;Appl. Phys. Lett.,1991

5. Simple Theory of Defects in Ternary and Multinary Semiconductors;Van Vechten,1987

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surface processing of CdTe crystals by an excimer laser and its application in fabricating nuclear radiation detectors;physica status solidi (c);2004-03

2. Shallow junction formation on p-like CdTe crystals by indium diffusion using excimer laser annealing;Journal of Electronic Materials;2001-08

3. Excimer laser doping techniques for II–VI semiconductors;Applied Surface Science;2001-05

4. Doping limits in II–VI compounds — Challenges, problems and solutions;Progress in Crystal Growth and Characterization of Materials;1998-01

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