Surface processing of CdTe crystals by an excimer laser and its application in fabricating nuclear radiation detectors-Reference-Cited by-同舟云学术

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Surface processing of CdTe crystals by an excimer laser and its application in fabricating nuclear radiation detectors

Published:2004-03 Issue:4 Volume:1 Page:1071-1074
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Niraula M.¹,Agata Y.¹,Yasuda K.¹,Nakamura A.²,Aoki T.²,Hatanaka Y.³

Affiliation:

1. Graduate School of Engineering, Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466‐8555, Japan

2. Research Institute of Electronics, Shizuoka University, 3‐5‐1 Johoku, Hamamatsu 432‐8011, Japan

3. Department of Elect. and Information Engineering, Aichi University of Technology, Gamagohri, Aichi 443‐0047, Japan

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200304279

Reference9 articles.

1. Laser processing of II–VI compounds for improved doping: application to ZnSe:N

2. Laser‐induced melting of predeposited impurity doping technique used to fabricate shallow junctions

3. M.Hage‐AliandP.Siffert Semiconductors and Semimetals series in Semiconductors for Room Temperature Nuclear Detector Applications Vol. 43 (Academic Press New York 1995) p. 275.

4. Fabrication and characterization of CdZnTe radiation detectors with a new P-I-N design

5. Shallow junction formation on p-like CdTe crystals by indium diffusion using excimer laser annealing

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. II-VI Wide-Bandgap Semiconductor Device Technology: Post-Deposition Treatments;Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors;2023

2. Optical emission characteristics of ablation plasma plumes during the laser-etching process of CdTe;Journal of Electronic Materials;2005-11

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