Electrical and Chemical Characterization of Contacts to Silicon Carbide-Reference-Cited by-同舟云学术

Electrical and Chemical Characterization of Contacts to Silicon Carbide

Published:1992 Issue: Volume:242 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Petit Jeremy B.,Zeller Mary V.

Abstract

ABSTRACTChemical and electrical studies were performed to determine the characteristics of contacts to 6H-SiC. Both elemental metals (Ni, Mo) and suicides (MoSi2, TaSi2, TiSi2) were studied. Chemical analysis by Auger Electron Spectroscopy (AES) was performed to examine interface reactions caused by heat treatment. Electrical measurements (current-voltage and capacitance-voltage) were made during annealing sequences to determine the rectifying or ohmic characteristics of the contacts. Where possible, barrier height and contact resistance values were calculated.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference7 articles.

1. Auger electron spectroscopy of Si

2. Obtaining the specific contact resistance from transmission line model measurements

3. The effects of contact size and non-zero metal resistance on the determination of specific contact resistance

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. New insights into linear electrical properties of pressureless sintered SiC-MoSi2-AlN composites;Journal of the European Ceramic Society;2019-04

2. Chapter 3 Building Blocks for SiC Devices: Ohmic Contacts, Schottky Contacts, and p-n Junctions;Semiconductors and Semimetals;1998

3. Ion beam assisted deposition of a tungsten compound layer on 6H-silicon carbide;Diamond and Related Materials;1997-08

4. Investigation of Co/SiC interface reaction;Journal of Electronic Materials;1997-03

5. Ion beam synthesis by tungsten-implantation into 6H-silicon carbide;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-05