1. A. Addamiano. “Semiconductive Crystals of Silicon Carbide with Improved Chromium-Containing Electrical Contacts.” US Patent No. 3510733, 1970.
2. Electrical properties of cubic silicon carbide;Aivazova;Sov. Phys. Semicond.,1977
3. A simple edge termination for silicon carbide devices with nearly ideal breakdown voltage;Alok;IEEE Electron. Dev. Lett.,1994
4. Effects of thermal excitation and quantum-mechanical transmission on photothreshold determination of Schottky barrier height;Anderson;Solid-State Electron.,1975
5. Barrier height in n-SiC-6H based Schottky diodes;Andreev;Semiconductors,1995