Angle control requirements and solutions for enabling high aspect ratio structures
Author:
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://link.springer.com/content/pdf/10.1557/s43580-022-00395-z.pdf
Reference5 articles.
1. Y. Kawasaki et al., Sheet Resistance dependence on ion angle deviation. in 2016 21st International Conference on Ion Implantation Technology (IIT) 2016, pp. 1–4. https://doi.org/10.1109/IIT.2016.7882905
2. J.-Y. Lee, J.-H. Lee, K.-H. Lee, S.-K. Lee, G.N. Cai, Y. Erokhin, Critical angle of channeling for low energy ion implantation. in 1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144), vol. 2, 1998, pp. 720–723. https://doi.org/10.1109/IIT.1998.813768
3. A. Renau, Device performance and yield—a new focus for ion implantation. in 2010 International Workshop on Junction Technology Extended Abstracts, 2010, pp. 1–6. https://doi.org/10.1109/IWJT.2010.5475003
4. U.J. Ukyo Jeong et al., Effects of beam incident angle control on NMOS source/drain extension applications. in Proceedings of the 14th International Conference on Ion Implantation Technology, 2002, pp. 64–68. https://doi.org/10.1109/IIT.2002.1257939
5. M. Tamura, S. Shukuri, Y. Kawamoto, Lattice defects generated by ion implantation into submicron Si areas. MRS Online Proc. Lib. 147 (1989)
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