Synthesis and characterization of single-crystal indium nitride nanowires

Abstract

InN nanowires were synthesized and characterized using a variety of techniques. A two-zone chemical vapor deposition technique was used to operate the vapor generation and the nanowire growth at differential temperatures, leading to high-quality single-crystalline nanowires and growth rates as high as 4–10 μm/h. Precise diameter control was achieved by using monodispersed gold clusters as the catalyst. Photoluminescence and Raman studies have been carried out for the InN nanowires at room temperature. Devices consisting of single nanowires have been fabricated to explore their electronic transport properties. The temperature dependence of the conductance revealed thermal emission as the dominating transport mechanism.