Author:
Carole D.,Vo-Ha A.,Lazar M.,Thierry-Jebali N.,Tournier D.,Brosselard P.,Thomas A.,Soulière V.,Ferro G.
Abstract
ABSTRACTSince a few years, VLS transport is studied not only for homoepitaxial SiC growth but also for SiC selective epitaxial growth (SEG). In this approach, a stacking of silicon and aluminum layers is deposited on the substrate and patterns are created by photolithography. Upon melting, the Al-Si liquid droplets are fed by propane to obtain the SEG of p-doped SiC. In this work, the growth mechanisms were deeper investigated, in particular the influence of the carrier gas (H2 or Ar) and the growth temperature. SEG experiments showed higher growth rates than those measured in the standard configuration (nonselective growth). Moreover, the SiC layers exhibited step-bunched areas characteristic of liquid phase growth but also areas with morphological features due to a disruption of the step-bunching growth mode.
Publisher
Springer Science and Business Media LLC
Reference8 articles.
1. Stable and metastable phase equilibria in the chemical interaction between aluminium and silicon carbide
2. Growth and Doping Modeling of SiC-CVD in a Horizontal Hot-Wall Reactor
3. [6] Carole D. , Berckmans S. , Vo-Ha A. , Lazar M. , Tournier D. , Brosselard P. , Soulière V. , Auvray L. , Ferro G. , Brylinski C. , Proceeding of the International Conference on Silicon Carbide and Related Materials, sept. 2011, to be published in Mater. Sci. Forum (2012)
4. Improvement of 4H–SiC selective epitaxial growth by VLS mechanism using Al and Ge-based melts
5. Is the Al Solubility Limit in SiC Temperature Dependent or not?
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