Band-Offsets Between Group-III-Nitrides-Reference-Cited by-同舟云学术

Band-Offsets Between Group-III-Nitrides

Published:1994 Issue: Volume:339 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Albanesi E. A.,Lambrecht W. R. L.,Segall B.

Abstract

ABSTRACTThe valence-band offset at the zincblende AIN/GaN. AIN/InN and InN/GaN (110) interfaces are calculated self-consistently by means of the linear muffin-tin orbital method using up to 5+5 layer supercells. All interfaces have a type I-offset. Assuming interface orientation and polytype effects on the valence-band maximum to be reasonably small, a type I offset can also be expected for wurtzite interfaces. Our results are in very good agreement with experimental values for AIN/GaN, the only nitride interface for which they are available.Subject index terms: band offsets, interfaces, hetero junctions, superlattices. III-nitrides.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

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